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Results 1 to 25 of 125

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The effect of KCN passivation on IR spectra of a-Si based structuresKOPANI, Martin; MIKULA, Milan; FUJIWARA, Naozumi et al.Applied surface science. 2012, Vol 258, Num 21, pp 8406-8408, issn 0169-4332, 3 p.Conference Paper

Characterization of three-dimensional microstructures in single-crystal diamondOLIVERO, P; RUBANOV, S; PRAWER, S et al.Diamond and related materials. 2006, Vol 15, Num 10, pp 1614-1621, issn 0925-9635, 8 p.Article

Evolution of hydrocarbon species on a silicon surface during methane plasma investigated by in-situ infrared spectroscopySHINOHARA, Masanori; KATAGIRI, Teruaki; IWATSUJI, Keitaro et al.Thin solid films. 2006, Vol 506-07, pp 710-714, issn 0040-6090, 5 p.Conference Paper

Influence of substrate dc bias on crystallinity of silicon films grown at a high rate from inductively-coupled plasma CVDKOSKU, N; MURAKAMI, H; HIGASHI, S et al.Applied surface science. 2005, Vol 244, Num 1-4, pp 39-42, issn 0169-4332, 4 p.Conference Paper

Mass production of high-quality single-wall carbon nanotubes by H2-N2 arc dischargeANDO, Yoshinori; XINLUO ZHAO; INOUE, Sakae et al.Diamond and related materials. 2005, Vol 14, Num 3-7, pp 729-732, issn 0925-9635, 4 p.Conference Paper

Lattice isotope effects on optical transitions in siliconHAYAMA, S; DAVIES, G; TAN, J et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 3, pp 035202.1-035202.9, issn 1098-0121Article

Interstitial nitrogen and its complexes in diamondGOSS, J. P; BRIDDON, P. R; PAPAGIANNIDIS, S et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 23, pp 235208.1-235208.15, issn 1098-0121Article

Internal stresses in {111} homoepitaxial CVD diamondMERMOUX, M; MARCUS, B; CRISCI, A et al.Diamond and related materials. 2004, Vol 13, Num 2, pp 329-334, issn 0925-9635, 6 p.Conference Paper

Characterization of <1 1 1> diamond thin films by micro-Raman spectroscopyMERMOUX, M; TAJANI, A; MARCUS, B et al.Diamond and related materials. 2004, Vol 13, Num 4-8, pp 886-890, issn 0925-9635, 5 p.Conference Paper

Raman scattering and photoluminescence studies on O+ implanted siliconPRABAKARAN, R; KESAVAMOORTHY, R; AMIRTHAPANDIAN, S et al.Physica. B, Condensed matter. 2003, Vol 337, Num 1-4, pp 36-41, issn 0921-4526, 6 p.Article

Optical and electronic properties of heavily boron-doped homo-epitaxial diamondBUSTARRET, E; GHEERAERT, E; WATANABE, K et al.Physica status solidi. A. Applied research. 2003, Vol 199, Num 1, pp 9-18, issn 0031-8965, 10 p.Conference Paper

Detection of residual molybdenum impurity in CVD diamondKROMKA, A; KRAVETZ, R; PORUBA, A et al.Physica status solidi. A. Applied research. 2003, Vol 199, Num 1, pp 108-112, issn 0031-8965, 5 p.Conference Paper

Infrared absorption studies in proton- and deuterium-implanted Si1-xGexPEREIRA, R. N; DOBACZEWSKI, L; NIELSEN, B. Bech et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 803-807, issn 0921-4526, 5 p.Conference Paper

Stress-induced-dichroism of the 648.2- and 1819.5-cm-1 infrared absorption lines of oxygen in siliconTAKAHASHI, Hideki; YAMADA-KANETA, Hiroshi; SUEZAWA, Masashi et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 592-595, issn 0921-4526, 4 p.Conference Paper

A comparison of laser- and furnace-annealed polysilicon structurePARRY, Andrea A; GILL, Kelly; GARDINER, Derek J et al.Semiconductor science and technology. 2002, Vol 17, Num 1, pp 47-54, issn 0268-1242Article

Non-destructive characterisation of doped Si and SiGe epilayers using FTIR spectroscopic ellipsometry (FTIR-SE)PICKERING, C; LEONG, W. Y; GLASPER, J. L et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 146-150, issn 0921-5107Conference Paper

Local variations and temperature dependence of optical absorption coefficient in natural IIa type and CVD diamond optical windowsREMES, Z; NESLADEK, M; PICKLES, C. S. J et al.Physica status solidi. A. Applied research. 2001, Vol 186, Num 2, pp 297-301, issn 0031-8965Conference Paper

Cs-H2* defect in crystalline siliconMARKEVICH, V. P; MURIN, L. I; HERMANSSON, J et al.Physica. B, Condensed matter. 2001, Vol 302-03, pp 220-226, issn 0921-4526Conference Paper

Interaction between self-interstitials and the oxygen dimer in siliconLINDSTRÖM, J. L; HALLBERG, T; HERMANSSON, J et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 284-289, issn 0921-4526Conference Paper

Raman spectroscopy study of amorphous SiGe films deposited by low pressure chemical vapor deposition and polycrystalline SiGe films obtained by solid-phase crystallizationOLIVARES, J; MARTIN, P; RODRIGUEZ, A et al.Thin solid films. 2000, Vol 358, Num 1-2, pp 56-61, issn 0040-6090Article

Baseline variations near the carbon impurity vibration band in infrared spectra of siliconSAITO, H; SHIRAI, H.Journal of the Electrochemical Society. 2000, Vol 147, Num 3, pp 1210-1212, issn 0013-4651Article

Isotopic composition dependence on infrared reflectance spectra of β-rhombohedral boron crystalsNOGI, N; TANAKA, S; NODA, T et al.Nippon Kinzoku Gakkaishi (1952). 1999, Vol 63, Num 9, pp 1157-1160, issn 0021-4876Article

Infrared spectroscopy of intraband transitions in Ge/Si quantum dot superlatticesWU, W.-G; LIU, J.-L; TANG, Y.-S et al.Superlattices and microstructures. 1999, Vol 26, Num 3, pp 219-227, issn 0749-6036Article

Surface Raman scattering study on the hydrogenated semiconductor surfaces : Vibrational dephasing dynamicsTSAI, C.-S; CHEN, C; LIN, C.-E et al.Surface science. 1999, Vol 427-28, pp 318-323, issn 0039-6028Conference Paper

Effect of layer thickness variation on light scattering by acoustic phonons in SiGe/Si superlatticesXIAOHAN LIU; DAMING HUANG; XINGJUN WANG et al.Thin solid films. 1998, Vol 321, Num 1-2, pp 163-166, issn 0040-6090Conference Paper

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